FQAF17P10
MOSFET P-CH 100V 12.4A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor QFET® FQAF17P10, a P-Channel MOSFET, offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12.4A at 25°C (Tc). This component features a maximum power dissipation of 56W (Tc) and a low on-resistance (Rds On) of 190mOhm at 6.2A and 10V gate drive. The gate charge (Qg) is rated at a maximum of 39 nC at 10V, with input capacitance (Ciss) at 1100 pF (Max) at 25V. Designed for through-hole mounting in a TO-3PF package, the FQAF17P10 operates across a temperature range of -55°C to 175°C (TJ). This device is suitable for applications in power supply units and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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