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FQAF17P10

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FQAF17P10

MOSFET P-CH 100V 12.4A TO3PF

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor QFET® FQAF17P10, a P-Channel MOSFET, offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12.4A at 25°C (Tc). This component features a maximum power dissipation of 56W (Tc) and a low on-resistance (Rds On) of 190mOhm at 6.2A and 10V gate drive. The gate charge (Qg) is rated at a maximum of 39 nC at 10V, with input capacitance (Ciss) at 1100 pF (Max) at 25V. Designed for through-hole mounting in a TO-3PF package, the FQAF17P10 operates across a temperature range of -55°C to 175°C (TJ). This device is suitable for applications in power supply units and motor control systems.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12.4A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 6.2A, 10V
FET Feature-
Power Dissipation (Max)56W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-3PF
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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