FQAF16N25
MOSFET N-CH 250V 12.4A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQAF16N25 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 12.4A at 25°C, with a maximum power dissipation of 85W (Tc). Key electrical characteristics include a maximum Rds On of 230mOhm at 6.2A and 10V, and a gate charge (Qg) of 35 nC at 10V. Input capacitance (Ciss) is rated at 1200 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-3PF package. This component is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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