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FQAF16N25

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FQAF16N25

MOSFET N-CH 250V 12.4A TO3PF

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's QFET® series FQAF16N25 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 12.4A at 25°C, with a maximum power dissipation of 85W (Tc). Key electrical characteristics include a maximum Rds On of 230mOhm at 6.2A and 10V, and a gate charge (Qg) of 35 nC at 10V. Input capacitance (Ciss) is rated at 1200 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-3PF package. This component is suitable for use in power supply, motor control, and lighting applications.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12.4A (Tc)
Rds On (Max) @ Id, Vgs230mOhm @ 6.2A, 10V
FET Feature-
Power Dissipation (Max)85W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-3PF
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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