FQAF14N30
MOSFET N-CH 300V 11.4A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel MOSFET, FQAF14N30. This device features a 300V drain-source voltage (Vdss) and 11.4A continuous drain current (Id) at 25°C (Tc). With a maximum power dissipation of 90W (Tc), it is suitable for demanding applications. The FQAF14N30 offers a low on-resistance of 290mOhm at 5.7A and 10V, with a gate charge (Qg) of 40 nC at 10V. Input capacitance (Ciss) is rated at 1360 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-3PF through-hole configuration, this MOSFET is utilized in power supply and power control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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