FQAF10N80
MOSFET N-CH 800V 6.7A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, FQAF10N80. This device features a Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 6.7A at 25°C (Tc). The Rds On is a maximum of 1.05 Ohms at 3.35A and 10V. With a high power dissipation of 113W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 71 nC at 10V and Input Capacitance (Ciss) up to 2700 pF at 25V. The FQAF10N80 utilizes Metal Oxide technology and is packaged in a TO-3PF through-hole mount. Operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply and industrial applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 3.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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