FQA90N10V2
MOSFET N-CH 100V 105A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, part number FQA90N10V2, offers a 100V drain-source breakdown voltage and a continuous drain current of 105A at 25°C (Tc). This TO-3P packaged device features a low on-resistance of 10mOhm maximum at 52.5A and 10V, with a gate threshold voltage of 4V maximum at 250µA. Key parameters include a 191 nC maximum gate charge at 10V and 6150 pF maximum input capacitance at 25V. The device supports a gate-source voltage range of ±30V and has a maximum power dissipation of 330W (Tc). Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 52.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 191 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6150 pF @ 25 V |
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