FQA8N90C
MOSFET N-CH 900V 8A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQA8N90C is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 8A at 25°C. With a low on-resistance (Rds On) of 1.9 Ohm maximum at 4A and 10V gate-source voltage, it ensures efficient power delivery. The device offers a maximum power dissipation of 240W (Tc) and a gate charge (Qg) of 45 nC at 10V. Its TO-3P package facilitates through-hole mounting and a wide operating temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 25 V |
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