FQA7N90
MOSFET N-CH 900V 7.4A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-Channel Power MOSFET, part number FQA7N90. This through-hole component features a Drain-Source Voltage (Vdss) of 900V and a continuous drain current (Id) of 7.4A at 25°C. The Rds On is specified at a maximum of 1.55 Ohms at 3.7A and 10V gate drive. Key parameters include a maximum power dissipation of 198W (Tc), input capacitance (Ciss) of 2280 pF at 25V, and gate charge (Qg) of 59 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-3P package. This MOSFET is suitable for applications in high-voltage power conversion and switching power supplies.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2280 pF @ 25 V |
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