FQA7N80
MOSFET N-CH 800V 7.2A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQA7N80 is an N-Channel Power MOSFET from the QFET® series. This component offers a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 7.2 A at 25°C (Tc). The device features a maximum On-Resistance (Rds On) of 1.5 Ohms at 3.6 A and 10 V. With a maximum power dissipation of 198 W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 52 nC at 10 V and input capacitance (Ciss) of 1850 pF at 25 V. The FQA7N80 employs Metal Oxide technology and is housed in a TO-3P-3, SC-65-3 through-hole package. Operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power supply units, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 25 V |
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