FQA6N80
MOSFET N-CH 800V 6.3A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQA6N80 is an N-Channel Power MOSFET from the QFET® series. This TO-3P packaged device offers an 800V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.3A at 25°C (Tc). Featuring a maximum on-resistance (Rds On) of 1.95 Ohms at 3.15A and 10V gate-source voltage, the FQA6N80 provides a maximum power dissipation of 185W (Tc). Key characteristics include input capacitance (Ciss) of 1500 pF at 25V and gate charge (Qg) of 31 nC at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply, lighting, and motor control industries.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 3.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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