FQA6N70
MOSFET N-CH 700V 6.4A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel Power MOSFET, part number FQA6N70, offers a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 6.4A at 25°C. This through-hole component features a low on-resistance (Rds On) of 1.5 Ohms maximum at 3.2A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 152W (Tc) and a gate charge (Qg) of 40 nC at 10V, this device is suitable for applications requiring high voltage switching. The TO-3P package ensures robust thermal performance. Typical applications include power supplies, lighting, and motor control systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) rating of ±30V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 152W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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