FQA34N25
MOSFET N-CH 250V 34A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FQA34N25 is an N-Channel power Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-voltage switching applications. This TO-3P packaged device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) capability of 34A at 25°C (Tc). The on-state resistance (Rds On) is specified at a maximum of 85mOhm at 17A and 10V gate drive. With a maximum power dissipation of 245W (Tc), it is suitable for demanding power conversion and control circuits. Key parameters include a gate charge (Qg) of 80 nC (Max) at 10V and input capacitance (Ciss) of 2750 pF (Max) at 25V. The FQA34N25 operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in industrial power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 245W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2750 pF @ 25 V |
Request a Quote
Clients Also Buy
HUFA75309D3S
MOSFET N-CH 55V 19A TO252AA
HUFA76432S3ST
MOSFET N-CH 60V 59A D2PAK
SFS9614
P-CHANNEL POWER MOSFET
