FQA17N40
MOSFET N-CH 400V 17.2A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQA17N40 is an N-Channel QFET® series MOSFET designed for high-voltage applications. This TO-3P packaged device offers a Drain-to-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 17.2A at 25°C (Tc). Key electrical specifications include a maximum On-Resistance (Rds On) of 270mOhm at 8.6A and 10V drive voltage, and a typical Gate Charge (Qg) of 60 nC at 10V. The FQA17N40 features a maximum power dissipation of 190W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). Its through-hole mounting style and TO-3P package are suitable for demanding power conversion and high-voltage switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 8.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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