FQA16N50
MOSFET N-CH 500V 16A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor N-Channel QFET® MOSFET, part number FQA16N50, offers a 500V drain-to-source voltage and a continuous drain current of 16A at 25°C (Tc). This through-hole TO-3P device features a maximum power dissipation of 200W (Tc) and an on-resistance (Rds On) of 320mOhm at 8A and 10V. Key parameters include a gate charge (Qg) of 75nC at 10V and an input capacitance (Ciss) of 3000pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply, lighting, and motor control industries.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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