FQA13N80
MOSFET N-CH 800V 12.6A TO3PNManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQA13N80 is an N-Channel MOSFET from the QFET® series. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 12.6A at 25°C. The device offers a maximum power dissipation of 300W (Tc) and a low on-resistance (Rds On) of 750mOhm at 6.3A and 10V gate-source voltage. It has a gate charge (Qg) of 88 nC at 10V and input capacitance (Ciss) of 3500 pF at 25V. The FQA13N80 is supplied in a TO-3PN package and is designed for through-hole mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly utilized in power supply units, lighting controls, and motor drive applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 6.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3500 pF @ 25 V |
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