FQA13N50C
MOSFET N-CH 500V 13.5A TO3PManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FQA13N50C is an N-Channel QFET® series MOSFET designed for demanding applications. This device features a maximum Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 13.5 A at 25°C (Tc). With a maximum power dissipation of 218 W (Tc) and a low Rds On of 480 mOhm at 6.75 A and 10 V, it offers efficient power handling. Key parameters include a Gate Charge (Qg) of 56 nC at 10 V and input capacitance (Ciss) of 2055 pF at 25 V. The FQA13N50C is packaged in a TO-3P through-hole configuration, suitable for power supply units, lighting, and motor control systems. It operates across a temperature range of -55°C to 150°C (TJ) with a ±30 V maximum Gate-to-Source voltage rating.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 218W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
