FDZ294N
MOSFET N-CH 20V 6A 9BGAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor FDZ294N is a PowerTrench® N-Channel MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and supports a continuous drain current of 6A at 25°C ambient. Its low on-resistance is specified at 23mOhm maximum at 6A and 4.5V Vgs. The MOSFET exhibits a low gate charge of 10 nC typical at 4.5V Vgs and an input capacitance of 670 pF maximum at 10V Vds. Optimized for efficiency, it offers a maximum power dissipation of 1.7W at 25°C ambient. The FDZ294N is supplied in a compact 9-VFBGA (1.5x1.6) package, suitable for surface mounting. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management solutions for consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 9-VFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 9-BGA (1.5x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
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