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FDZ209N

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FDZ209N

MOSFET N-CH 60V 4A 12BGA

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDZ209N is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 4A at 25°C ambient temperature. The MOSFET exhibits a maximum on-resistance of 80mOhm at 4A and 5V gate drive voltage, facilitated by its advanced PowerTrench® technology. With a gate charge of 9 nC at 5V and input capacitance of 657 pF at 30V, it offers optimized switching performance. The FDZ209N is housed in a compact 12-BGA (2x2.5) surface mount package, supporting a maximum power dissipation of 2W. It operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in areas such as power supplies, battery management, and motor control systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: UnknownPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case12-WFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 4A, 5V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package12-BGA (2x2.5)
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds657 pF @ 30 V

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