FDZ209N
MOSFET N-CH 60V 4A 12BGAManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDZ209N is an N-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a 60V drain-to-source breakdown voltage and a continuous drain current capability of 4A at 25°C ambient temperature. The MOSFET exhibits a maximum on-resistance of 80mOhm at 4A and 5V gate drive voltage, facilitated by its advanced PowerTrench® technology. With a gate charge of 9 nC at 5V and input capacitance of 657 pF at 30V, it offers optimized switching performance. The FDZ209N is housed in a compact 12-BGA (2x2.5) surface mount package, supporting a maximum power dissipation of 2W. It operates across a wide temperature range of -55°C to 150°C (TJ). This component finds application in areas such as power supplies, battery management, and motor control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 12-WFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 4A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 12-BGA (2x2.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 657 pF @ 30 V |
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