FDW262P
MOSFET P-CH 20V 4.5A 8TSSOPManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDW262P is a P-Channel PowerTrench® MOSFET designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a Continuous Drain Current (Id) of 4.5A at 25°C (Ta), with a maximum power dissipation of 1.3W (Ta). The Rds On is specified at a maximum of 47mOhm at 4.5A and 4.5V.
Key electrical characteristics include a Gate Charge (Qg) of 18 nC maximum at 4.5V and an Input Capacitance (Ciss) of 1193 pF maximum at 10V. The MOSFET operates with a Gate-to-Source Voltage (Vgs) range of ±8V and a threshold voltage (Vgs(th)) of 1.5V maximum at 250µA. Drive voltages for optimal Rds On performance range from 1.8V to 4.5V.
Packaged in an 8-TSSOP configuration, the Fairchild Semiconductor FDW262P is suitable for surface mount applications and operates across a temperature range of -55°C to 150°C. This component finds application in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1193 pF @ 10 V |
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