FDU8878
MOSFET N-CH 30V 11A/40A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDU8878 is a 30V N-Channel Power MOSFET in an IPAK package. This component from the PowerTrench® series offers a continuous drain current of 11A at ambient temperature and 40A at case temperature, with a maximum power dissipation of 40W at the case. Key electrical characteristics include a low Rds On of 15mOhm at 35A and 10V, and a gate charge (Qg) of 26 nC at 10V. The input capacitance (Ciss) is a maximum of 880 pF at 15V. Designed for through-hole mounting, the FDU8878 operates across a wide temperature range of -55°C to 175°C. This device is suitable for various industrial applications requiring efficient power switching.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 15 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
