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FDU8876

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FDU8876

MOSFET N-CH 30V 15A/73A IPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDU8876 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This component features a 30V drain-source voltage (Vdss) and offers robust current handling capabilities, with a continuous drain current of 15A at 25°C ambient and 73A at 25°C case temperature. The device dissipates up to 70W at 25°C case temperature. Key electrical characteristics include a low on-resistance of 8.2mOhm maximum at 35A and 10V, and a gate charge (Qg) of 47 nC maximum at 10V. Input capacitance (Ciss) is 1700 pF maximum at 15V. The FDU8876 utilizes through-hole mounting in an IPAK package (TO-251-3 Short Leads, TO-251AA) and operates across a wide temperature range from -55°C to 175°C. This MOSFET is suitable for power management, switching, and motor control applications across various industrial sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs8.2mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)70W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 15 V

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