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FDU8874

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FDU8874

MOSFET N-CH 30V 18A/116A IPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDU8874 is an N-Channel Power MOSFET from the PowerTrench® series. This component features a drain-source breakdown voltage of 30V and offers a continuous drain current of 18A at 25°C ambient temperature and 116A at 25°C case temperature. Maximum continuous power dissipation is rated at 110W (Tc). The device exhibits a low on-resistance of 5.1mOhm at 35A and 10V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 72 nC at 10V and input capacitance (Ciss) of 2990 pF at 15V. It supports gate-source voltages from ±20V. The FDU8874 is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package for through-hole mounting. This MOSFET is suitable for applications in power management, industrial automation, and consumer electronics. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs5.1mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2990 pF @ 15 V

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