FDU8870
MOSFET N-CH 30V 21A/160A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDU8870 is a PowerTrench® N-Channel MOSFET designed for high-efficiency power switching applications. This through-hole component offers a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 21A at 25°C ambient and 160A at 25°C case temperature. Its low on-resistance, specified at a maximum of 3.9 mOhm at 35A and 10V Vgs, contributes to reduced conduction losses. The device features a maximum power dissipation of 160W at case temperature and operates across a wide temperature range of -55°C to 175°C. Key electrical parameters include a gate-source voltage (Vgs) range of ±20V, a threshold voltage (Vgs(th)) of 2.5V, and a gate charge (Qg) of 118 nC at 10V. The FDU8870 is housed in an IPAK package, specifically TO-251-3 Short Leads. This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and consumer electronics where robust power handling is essential.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5160 pF @ 15 V |
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