FDU8778
MOSFET N-CH 25V 35A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDU8778 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 35A at 25°C (Tc). The Rds On is specified at a maximum of 14mOhm at 35A and 10V Vgs. With a maximum Power Dissipation of 39W (Tc), it is suitable for thermal management considerations in demanding environments. The device is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting. Key parameters include a gate charge (Qg) of 18 nC (max) at 10V Vgs and an input capacitance (Ciss) of 845 pF (max) at 13V Vds. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 845 pF @ 13 V |
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