FDU8770
MOSFET N-CH 25V 35A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDU8770 is an N-Channel Power MOSFET from the PowerTrench® series, designed for robust power switching applications. This component features a Drain-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 35A at 25°C with a maximum power dissipation of 115W (Tc). The low on-resistance of 4mOhm at 35A and 10V gate drive, combined with a maximum gate charge (Qg) of 73 nC at 10V, ensures efficient switching performance. It is supplied in an IPAK (TO-251-3 Short Leads) package for through-hole mounting, suitable for industrial and automotive power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 13 V |
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