FDU6688
MOSFET N-CH 30V 84A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's PowerTrench® FDU6688 is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 84A at 25°C, with a maximum power dissipation of 83W. Optimized for performance, it exhibits a low on-resistance (Rds On) of 5mOhm at 18A and 10V gate drive. The device is housed in an IPAK (TO-251-3 Short Leads) through-hole package, facilitating robust assembly. Key electrical characteristics include a gate charge (Qg) of 56 nC at 5V and input capacitance (Ciss) of 3845 pF at 15V. The FDU6688 is suitable for use in industrial, automotive, and consumer electronics power management systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 84A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3845 pF @ 15 V |
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