FDU6676AS
MOSFET N-CH 30V 90A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FDU6676AS is a PowerTrench® N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. Designed for high current applications, it offers a continuous drain current (Id) of 90A at 25°C and a maximum power dissipation of 70W. The device features a low on-resistance (Rds On) of 5.8mOhm at 16A and 10V gate drive. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 2470 pF at 15V. The FDU6676AS utilizes Metal Oxide technology and is housed in an IPAK package (TO-251-3 Short Leads, TO-251AA) suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C. This component finds application in power management systems and automotive electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 15 V |
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