FDU6612A
MOSFET N-CH 30V 9.5A/30A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDU6612A, an N-Channel PowerTrench® MOSFET, offers a 30V drain-source breakdown voltage. This component features a continuous drain current capability of 9.5A at ambient temperature and 30A at case temperature. With a maximum power dissipation of 2.8W (Ta) and 36W (Tc), it is designed for efficient thermal management. The Rds(On) is specified at a maximum of 20mOhm at 9.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 9.4 nC and input capacitance (Ciss) of 660 pF. This through-hole mounted device, packaged in IPAK (TO-251-3 Short Leads), operates across a wide temperature range of -55°C to 175°C. Applications include power management, motor control, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 36W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.4 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 15 V |
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