FDU6512A
MOSFET N-CH 20V 10.7A/36A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDU6512A is an N-Channel PowerTrench® MOSFET in an IPAK package. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current capability of 10.7A at ambient temperature and 36A at case temperature. The Rds(on) is specified at a maximum of 21mOhm at 10.7A and 4.5V Vgs. Gate charge (Qg) is a maximum of 19nC at 4.5V, and input capacitance (Ciss) is 1082pF at 10V. Power dissipation is 3.8W (Ta) and 43W (Tc). The operating temperature range is -55°C to 175°C. This device is suitable for applications in power management, battery charging, and motor control.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10.7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1082 pF @ 10 V |
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