FDU3580
MOSFET N-CH 80V 7.7A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDU3580 is an N-Channel PowerTrench® MOSFET designed for demanding applications. This through-hole component, packaged in an IPAK (TO-251AA) configuration, offers a Drain-Source Voltage (Vdss) of 80V. With a continuous drain current capability of 7.7A (Ta) at 25°C, it is suitable for power switching and control functions. The device exhibits a maximum Rds On of 29mOhm at 7.7A and 10V Vgs, with a drive voltage range of 6V to 10V. Key electrical characteristics include a maximum Gate Charge (Qg) of 79 nC at 10V and an input capacitance (Ciss) of 1760 pF at 40V Vds. The FDU3580 supports a wide operating temperature range from -55°C to 175°C (TJ) and can dissipate up to 3.8W (Ta) or 42W (Tc). This component finds application in various power management solutions within the industrial and computing sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 40 V |
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