FDU068AN03L
MOSFET N-CH 30V 17A/35A IPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's PowerTrench® FDU068AN03L is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 17A at ambient temperature (Ta) and 35A at case temperature (Tc), with a maximum power dissipation of 80W (Tc). The low on-resistance of 5.7mOhm at 35A and 10V gate drive is achieved through Fairchild's advanced PowerTrench® technology. It offers a gate charge (Qg) of 60 nC maximum at 10V and an input capacitance (Ciss) of 2525 pF maximum at 15V. The FDU068AN03L is housed in a TO-251-3 Short Leads, IPAK package, facilitating through-hole mounting. This MOSFET is suitable for use in power management, automotive, and industrial applications requiring robust and efficient power conversion. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2525 pF @ 15 V |
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