FDS8670
MOSFET N-CH 30V 21A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FDS8670 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and can handle a continuous drain current of 21A (Ta) at 25°C. The Rds(On) is specified at a maximum of 3.7mOhm when operating at 21A and 10V Vgs. With a gate charge (Qg) of 82 nC (max) at 10V Vgs and input capacitance (Ciss) of 4040 pF (max) at 15V Vds, it offers optimized switching performance. The device is housed in a compact 8-SOIC package (0.154", 3.90mm width) suitable for surface mounting and has a maximum power dissipation of 2.5W (Ta). Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics, industrial power supplies, and automotive systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4040 pF @ 15 V |
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