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FDS7764S

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FDS7764S

MOSFET N-CH 30V 13.5A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDS7764S is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 13.5A at 25°C, with a maximum power dissipation of 2.5W. The device exhibits a low on-resistance of 7.5mOhm at 13.5A and 10V gate-source voltage, enabled by its Metal Oxide technology. Key parameters include a maximum gate charge (Qg) of 35 nC at 5V and an input capacitance (Ciss) of 2800 pF at 15V. Operating across a temperature range of -55°C to 150°C, the FDS7764S is supplied in an 8-SOIC surface-mount package. Its robust performance makes it suitable for use in various industries, including consumer electronics and industrial automation.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 13.5A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id2V @ 1mA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 15 V

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