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FDS7082N3

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FDS7082N3

MOSFET N-CH 30V 17.5A 8SO

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDS7082N3 is an N-Channel MOSFET from the PowerTrench® series, designed for efficient power management. This component features a drain-source voltage (Vdss) of 30V and supports a continuous drain current (Id) of 17.5A at 25°C. The device exhibits a low on-resistance (Rds On) of 6mOhm at 17.5A and 10V Vgs, with a typical gate threshold voltage (Vgs(th)) of 3V at 250µA. Key parameters include a gate charge (Qg) of 53 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2271 pF maximum at 15V Vds. Operating within a temperature range of -55°C to 150°C, the FDS7082N3 is housed in an 8-SOIC package, suitable for surface mounting. This MOSFET is utilized in various applications, including power supplies and motor control, across industrial and consumer electronics sectors.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta)
Rds On (Max) @ Id, Vgs6mOhm @ 17.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2271 pF @ 15 V

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