FDS7066ASN3
MOSFET N-CH 30V 19A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS7066ASN3 is an N-Channel Power Trench® MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 19A at 25°C, with a maximum power dissipation of 3W. The low on-resistance of 4.8mOhm is achieved at 19A and 10V Vgs. Key electrical parameters include a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 3V at 1mA. Input capacitance (Ciss) is rated at 2460pF at 15V, and gate charge (Qg) is 62nC at 10V. This MOSFET is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. It is commonly utilized in computing, industrial, and automotive power management solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2460 pF @ 15 V |
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