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FDS7064N

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FDS7064N

MOSFET N-CH 30V 16A 8SO

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDS7064N is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C with a maximum power dissipation of 3W (Ta). The low on-resistance is specified at 7.5mOhm at 16A and 4.5V gate-source voltage (Vgs), with a threshold voltage (Vgs(th)) of 2V at 250µA. The gate charge (Qg) is a maximum of 48nC at 4.5V Vgs, and input capacitance (Ciss) is 3355pF at 15V Vds. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, suitable for operation across a temperature range of -55°C to 150°C (TJ). This device is commonly utilized in power management, automotive, and industrial systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 16A, 4.5V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3355 pF @ 15 V

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