FDS7060N7
MOSFET N-CH 30V 19A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS7060N7 is an N-Channel PowerTrench® MOSFET designed for efficient power management. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 19 A at 25°C. The low on-resistance (Rds On) of 5 mOhm at 19 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 3 W, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 56 nC at 5 V and an input capacitance (Ciss) of 3274 pF at 15 V. The device operates across a temperature range of -55°C to 150°C. This component is housed in an 8-SOIC (0.154", 3.90mm Width) package, designed for surface mounting. The FDS7060N7 finds application in power supplies, motor control, and battery management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3274 pF @ 15 V |
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