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FDS7060N7

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FDS7060N7

MOSFET N-CH 30V 19A 8SO

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDS7060N7 is an N-Channel PowerTrench® MOSFET designed for efficient power management. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 19 A at 25°C. The low on-resistance (Rds On) of 5 mOhm at 19 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 3 W, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 56 nC at 5 V and an input capacitance (Ciss) of 3274 pF at 15 V. The device operates across a temperature range of -55°C to 150°C. This component is housed in an 8-SOIC (0.154", 3.90mm Width) package, designed for surface mounting. The FDS7060N7 finds application in power supplies, motor control, and battery management systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Rds On (Max) @ Id, Vgs5mOhm @ 19A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds3274 pF @ 15 V

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