FDS6689S
MOSFET N-CH 30V 16A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS6689S is a high-performance N-Channel MOSFET designed for demanding power management applications. This device features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 16A at 25°C, with a low on-resistance (Rds On) of 5.4mOhm at 16A and 10V Vgs. The low threshold voltage (Vgs(th)) of 3V at 1mA and robust gate charge (Qg) of 78nC at 10V Vgs facilitate efficient switching. Operating across a wide temperature range of -55°C to 150°C, the FDS6689S is housed in an 8-SOIC package, suitable for surface mount assembly. Industries leveraging this component include automotive and industrial power control systems. The power dissipation (Pd) is rated at 2.5W.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 5.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 15 V |
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