FDS6688S
MOSFET N-CH 30V 16A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDS6688S, a PowerTrench® series N-Channel MOSFET, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C. This surface mount component in an 8-SOIC package features a low on-resistance of 6mOhm at 16A and 10V Vgs. Key parameters include a gate charge of 78 nC (max) at 10V and input capacitance of 3290 pF (max) at 15V. The device operates within a temperature range of -55°C to 175°C. Applications for this MOSFET include power management, automotive systems, and industrial motor control.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 15 V |
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