FDS6680
MOSFET N-CH 30V 11.5A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDS6680 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 30 V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 11.5 A at 25°C, with a maximum power dissipation of 2.5 W. The FDS6680 exhibits a low on-resistance (Rds On) of 10 mOhm at 11.5 A and 10 V, and a gate charge (Qg) of 27 nC at 5 V. It utilizes advanced PowerTrench® technology for minimized on-resistance and optimized switching performance. The component is housed in a standard 8-SOIC package, suitable for surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly employed in power management solutions across various industries, including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 15 V |
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