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FDS6680

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FDS6680

MOSFET N-CH 30V 11.5A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDS6680 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 30 V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 11.5 A at 25°C, with a maximum power dissipation of 2.5 W. The FDS6680 exhibits a low on-resistance (Rds On) of 10 mOhm at 11.5 A and 10 V, and a gate charge (Qg) of 27 nC at 5 V. It utilizes advanced PowerTrench® technology for minimized on-resistance and optimized switching performance. The component is housed in a standard 8-SOIC package, suitable for surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is commonly employed in power management solutions across various industries, including consumer electronics and industrial automation.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 11.5A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2070 pF @ 15 V

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