FDS6614A
MOSFET N-CH 30V 9.3A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS6614A is a PowerTrench® N-Channel MOSFET in an 8-SOIC package. This device offers a 30V drain-source breakdown voltage (Vds) and supports a continuous drain current (Id) of 9.3A at 25°C ambient. The Rds(On) is specified at a maximum of 18mOhm when driven at 10V Vgs and subjected to 9.3A Id. It features a gate charge (Qg) of 17nC maximum at 5V Vgs and an input capacitance (Ciss) of 1160pF maximum at 15V Vds. With a maximum power dissipation of 2.5W (Ta) and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power management and general switching.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 9.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 15 V |
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