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FDS6572A

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FDS6572A

MOSFET N-CH 20V 16A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor FDS6572A is a PowerTrench® series N-Channel MOSFET designed for high-efficiency power management applications. This component features a drain-to-source voltage of 20V and a continuous drain current capability of 16A (Ta) at 25°C. The Rds On (Max) is specified at 6mOhm at 16A, 4.5V, with typical drive voltages ranging from 2.5V to 4.5V. The device offers a maximum power dissipation of 2.5W (Ta) and a gate charge (Qg) of 80 nC @ 4.5 V. Input capacitance (Ciss) is a maximum of 5914 pF @ 10 V. The FDS6572A is housed in an 8-SOIC (0.154", 3.90mm Width) package and supports a wide operating temperature range of -55°C to 175°C (TJ). This MOSFET is commonly employed in consumer electronics, industrial power supplies, and automotive systems.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Rds On (Max) @ Id, Vgs6mOhm @ 16A, 4.5V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5914 pF @ 10 V

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