FDS6299S
MOSFET N-CH 30V 21A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS6299S is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 21A at 25°C, with a maximum power dissipation of 3W (Ta). The Rds(On) is specified as 3.9mOhm at an Id of 21A and Vgs of 10V, facilitated by drive voltages ranging from 4.5V to 10V.
The device exhibits a maximum gate charge (Qg) of 81 nC at 10V and an input capacitance (Ciss) of 3880 pF at 15V. Engineered with Fairchild's PowerTrench® technology, it offers optimized switching performance. The MOSFET is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. Its robust design makes it suitable for use in various demanding applications, including power management, automotive systems, and industrial control. The FDS6299S supports a Vgs(th) of 3V at 1mA and a maximum Vgs of ±20V.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3880 pF @ 15 V |
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