FDS6162N7
MOSFET N-CH 20V 23A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS6162N7 is an N-Channel PowerTrench® MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 23A at 25°C. The FDS6162N7 exhibits a low on-resistance (Rds On) of 3.5mOhm maximum at 23A and 4.5V gate-source voltage, optimized for minimal conduction losses. Key parameters include a gate charge (Qg) of 73 nC maximum at 4.5V and an input capacitance (Ciss) of 5521 pF maximum at 10V. With a maximum power dissipation of 3W, it is suitable for demanding thermal environments. The FDS6162N7 is housed in an 8-SOIC (0.154"", 3.90mm Width) surface-mount package, ideal for compact designs. Its operating temperature range is -55°C to 150°C. This component finds application in various industries including consumer electronics and industrial power solutions.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 23A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5521 pF @ 10 V |
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