FDS6162N3
MOSFET N-CH 20V 21A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDS6162N3 is a PowerTrench® N-channel MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 21A at 25°C. The low on-resistance, specified at a maximum of 4.5mOhm at 21A and 4.5V Vgs, ensures efficient power transfer. With a gate charge (Qg) of 73 nC at 4.5V and an input capacitance (Ciss) of 5521 pF at 10V, it is optimized for fast switching. The MOSFET supports drive voltages from 2.5V to 4.5V and has a maximum gate-source voltage of ±12V. The FDS6162N3 is housed in an 8-SOIC package, suitable for surface mounting, and offers a maximum power dissipation of 3W. This component is commonly utilized in power management, automotive, and industrial systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 21A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5521 pF @ 10 V |
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