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FDS5692Z

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FDS5692Z

MOSFET N-CH 50V 5.8A 8SOIC

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor UltraFET™ series N-Channel Power MOSFET, part number FDS5692Z. This component features a 50V drain-source breakdown voltage and a continuous drain current rating of 5.8A at 25°C. The device offers a low on-resistance of 24mOhm maximum at 5.8A and 10V Vgs. Key electrical parameters include a gate charge of 25 nC maximum at 10V Vgs and an input capacitance of 1025 pF maximum at 25V Vds. Designed for surface mounting, it is housed in an 8-SOIC package. The maximum power dissipation is 2.5W. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics, industrial control, and power management systems.

Additional Information

Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.8A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 5.8A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)50 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1025 pF @ 25 V

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