FDS5692Z
MOSFET N-CH 50V 5.8A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor UltraFET™ series N-Channel Power MOSFET, part number FDS5692Z. This component features a 50V drain-source breakdown voltage and a continuous drain current rating of 5.8A at 25°C. The device offers a low on-resistance of 24mOhm maximum at 5.8A and 10V Vgs. Key electrical parameters include a gate charge of 25 nC maximum at 10V Vgs and an input capacitance of 1025 pF maximum at 25V Vds. Designed for surface mounting, it is housed in an 8-SOIC package. The maximum power dissipation is 2.5W. Operating temperature range is -55°C to 150°C. This MOSFET is suitable for applications in consumer electronics, industrial control, and power management systems.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 5.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
