FDS4770
MOSFET N-CH 40V 13.2A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FDS4770 is a PowerTrench® series N-Channel MOSFET. This component features a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 13.2A at 25°C. The device offers a low on-resistance (Rds On) of 7.5mOhm maximum at 13.2A and 10V gate-source voltage. Key electrical characteristics include a maximum gate charge (Qg) of 67 nC at 10V and an input capacitance (Ciss) of 2819 pF maximum at 20V. The FDS4770 is designed for surface mounting within an 8-SOIC package, suitable for applications requiring high efficiency power switching. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W (Ta). This MOSFET is commonly utilized in power management solutions, automotive electronics, and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 13.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2819 pF @ 20 V |
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