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FDS4070N7

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FDS4070N7

MOSFET N-CH 40V 15.3A 8SO

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FDS4070N7 is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 15.3A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 7mOhm at 15.3A and 10V gate-source voltage. With a gate charge (Qg) of 67nC at 10V and input capacitance (Ciss) of 2819pF at 20V, it is optimized for switching performance. The FDS4070N7 is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package, offering a maximum power dissipation of 3W. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in industrial and computing power supply applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15.3A (Ta)
Rds On (Max) @ Id, Vgs7mOhm @ 15.3A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2819 pF @ 20 V

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