FDS3170N7
MOSFET N-CH 100V 6.7A 8SOManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor PowerTrench® N-Channel MOSFET, part number FDS3170N7. This 100V device features a continuous drain current capability of 6.7A (Ta) and a maximum power dissipation of 3W (Ta). The Rds On is specified at 26mOhm maximum at 6.7A, 10V. Key parameters include a gate charge (Qg) of 77 nC @ 10V and input capacitance (Ciss) of 2714 pF @ 50V. The device operates over a temperature range of -55°C to 150°C (TJ). It is supplied in an 8-SOIC package for surface mounting and is suitable for applications in power management and general-purpose switching.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2714 pF @ 50 V |
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