FDS2170N7
MOSFET N-CH 200V 3A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS2170N7 is a PowerTrench® N-Channel MOSFET designed for efficient power management. This device features a 200 V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) rating of 3 A at 25°C. The Rds On is specified at a maximum of 128 mOhm at 3 A and 10 V gate drive. Key parameters include a 36 nC maximum gate charge (Qg) at 10 V and 1292 pF maximum input capacitance (Ciss) at 100 V. The MOSFET offers a ±20 V maximum gate-source voltage (Vgs) and a threshold voltage (Vgs(th)) of 4.5 V at 250 µA. Dissipation is rated at 3 W. This component is housed in an 8-SOIC (0.154", 3.90mm Width) package and is suitable for applications in industrial and consumer electronics requiring reliable switching performance. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 128mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1292 pF @ 100 V |
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