FDS2170N3
MOSFET N-CH 200V 3A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FDS2170N3 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3A at 25°C, with a maximum power dissipation of 3W. The Rds On is specified at 128mOhm maximum at 3A and 10V Vgs. The MOSFET utilizes Fairchild's advanced PowerTrench® technology to optimize performance and minimize switching losses. Key parameters include a Gate Charge (Qg) of 36 nC at 10V and Input Capacitance (Ciss) of 1292 pF at 100V. The FDS2170N3 is housed in an 8-SOIC package suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This component finds application in power supplies, lighting, and motor control systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 128mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1292 pF @ 100 V |
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